APT8M100B

Roving Networks / Microchip Technology

MOSFET N-CH 1000V 8A TO247

Description
MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.8Ohm @ 4A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 1885 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-247 [B] TO-247-3

RoHS Compliant

APT8M100B Datasheet

In Stock: 310

Can ship immediately

QTY UNIT PRICE
1:$3.53000
10:$3.15273
100:$2.58522

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1885 pF @ 25 V
FET Feature:-
Power Dissipation (Max):290W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 [B]
Package / Case:TO-247-3

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