FCPF11N60NT

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 600V 10.8A TO220F

Description
MOSFET (Metal Oxide) 600 V 10.8A (Tc) 10V 299mOhm @ 5.4A, 10V 4V @ 250µA 35.6 nC @ 10 V ±30V 1505 pF @ 100 V - 32.1W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-220F TO-220-3 Full Pack

RoHS Compliant

FCPF11N60NT Datasheet

In Stock: 896

Can ship immediately

QTY UNIT PRICE
1:$3.36000
10:$3.00008
100:$2.45998

Product Specifications

TypeDescription
Series:SuperMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1505 pF @ 100 V
FET Feature:-
Power Dissipation (Max):32.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack

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