IRLB8314PBF

IR (Infineon Technologies)

MOSFET N-CH 30V 171A TO220-3

Description
MOSFET (Metal Oxide) 30 V 171A (Tc) 4.5V, 10V 2.4mOhm @ 68A, 10V 2.2V @ 100µA 60 nC @ 4.5 V ±20V 5050 pF @ 15 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3

RoHS Compliant

IRLB8314PBF Datasheet

In Stock: 160

Can ship immediately

QTY UNIT PRICE
1:$0.97000
10:$0.86444
100:$0.69279

Product Specifications

TypeDescription
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:171A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 68A, 10V
Vgs(th) (Max) @ Id:2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5050 pF @ 15 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3

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