BSZ900N20NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 200V 15.2A 8TSDSON

Description
MOSFET (Metal Oxide) 200 V 15.2A (Tc) 10V 90mOhm @ 7.6A, 10V 4V @ 30µA 11.6 nC @ 10 V ±20V 920 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TSDSON-8 8-PowerTDFN

RoHS Compliant

BSZ900N20NS3GATMA1 Datasheet

In Stock: 22,789

Can ship immediately

QTY UNIT PRICE
1:$1.78000
5000:$0.78578
10000:$0.76930

Product Specifications

TypeDescription
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:11.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 100 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN

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