SI3473DDV-T1-GE3

Vishay / Siliconix

MOSFET P-CHANNEL 12V 8A 6TSOP

Description
MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 17.8mOhm @ 8.7A, 4.5V 1V @ 250µA 57 nC @ 8 V ±8V 1975 pF @ 6 V - 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount 6-TSOP SOT-23-6 Thin, TSOT-23-6

RoHS Compliant

SI3473DDV-T1-GE3 Datasheet

In Stock: 3,106

Can ship immediately

QTY UNIT PRICE
1:$0.53000
3000:$0.16578
6000:$0.15626

Product Specifications

TypeDescription
Series:TrenchFET® Gen III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:17.8mOhm @ 8.7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1975 pF @ 6 V
FET Feature:-
Power Dissipation (Max):3.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6

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