BSC067N06LS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 60V 15A/50A TDSON

Description
MOSFET (Metal Oxide) 60 V 15A (Ta), 50A (Tc) 4.5V, 10V 6.7mOhm @ 50A, 10V 2.2V @ 35µA 67 nC @ 10 V ±20V 5100 pF @ 30 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TDSON-8-5 8-PowerTDFN

RoHS Compliant

BSC067N06LS3GATMA1 Datasheet

In Stock: 1,749

Can ship immediately

QTY UNIT PRICE
1:$1.43000
5000:$0.72425
10000:$0.70015

Product Specifications

TypeDescription
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN

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