SI8812DB-T2-E1

Vishay / Siliconix

MOSFET N-CH 20V 4MICROFOOT

Description
MOSFET (Metal Oxide) 20 V 2.3A (Ta) 1.2V, 4.5V 59mOhm @ 1A, 4.5V 1V @ 250µA 17 nC @ 8 V ±5V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount 4-Microfoot 4-UFBGA

RoHS Compliant

SI8812DB-T2-E1 Datasheet

In Stock: 218

Can ship immediately

QTY UNIT PRICE
1:$0.46000
3000:$0.17832
6000:$0.16746

Product Specifications

TypeDescription
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 8 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-UFBGA

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