EPC2015C

EPC

GANFET N-CH 40V 53A DIE

Description
GaNFET (Gallium Nitride) 40 V 53A (Ta) 5V 4mOhm @ 33A, 5V 2.5V @ 9mA 8.7 nC @ 5 V +6V, -4V 1180 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount Die Die

RoHS Compliant

EPC2015C Datasheet

In Stock: 6,260

Can ship immediately

QTY UNIT PRICE
1:$4.84000
2500:$2.41377

Product Specifications

TypeDescription
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:53A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id:2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:1180 pF @ 20 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die

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