SIHU6N62E-GE3

Vishay / Siliconix

MOSFET N-CH 620V 6A IPAK

Description
MOSFET (Metal Oxide) 620 V 6A (Tc) 10V 900mOhm @ 3A, 10V 4V @ 250µA 34 nC @ 10 V ±30V 578 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole IPAK (TO-251) TO-251-3 Short Leads, IPak, TO-251AA

RoHS Compliant

SIHU6N62E-GE3 Datasheet

In Stock: 3,012

Can ship immediately

QTY UNIT PRICE
1:$1.73000
3000:$0.78097
6000:$0.74430

Product Specifications

TypeDescription
Series:-
Package:Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:578 pF @ 100 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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