SQ4431EY-T1_GE3

Vishay / Siliconix

MOSFET P-CH 30V 10.8A 8SO

Description
MOSFET (Metal Oxide) 30 V 10.8A (Tc) 10V 30mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1265 pF @ 15 V - 6W (Tc) -55°C ~ 175°C (TJ) Surface Mount 8-SO 8-SOIC (0.154", 3.90mm Width)

RoHS Compliant

SQ4431EY-T1_GE3 Datasheet

In Stock: 203

Can ship immediately

QTY UNIT PRICE
1:$0.98000
2500:$0.46164
5000:$0.43997

Product Specifications

TypeDescription
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1265 pF @ 15 V
FET Feature:-
Power Dissipation (Max):6W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)

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