Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 12A TO3P
RoHS Compliant
Can ship immediately
QTY | UNIT PRICE |
1: | $4.26000 |
50: | $3.42383 |
100: | $3.11959 |
Type | Description |
---|---|
Series: | DTMOSII |
Package: | Bulk |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 400mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 720 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 144W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P(N) |
Package / Case: | TO-3P-3, SC-65-3 |