Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 1.9A UFV
RoHS Compliant
Can ship immediately
| QTY | UNIT PRICE |
| 1: | $0.50000 |
| Type | Description |
|---|---|
| Series: | U-MOSIII |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 1.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
| Rds On (Max) @ Id, Vgs: | 133mOhm @ 1A, 4V |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 1.9 nC @ 4 V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 123 pF @ 15 V |
| FET Feature: | Schottky Diode (Isolated) |
| Power Dissipation (Max): | 500mW (Ta) |
| Operating Temperature: | 150°C |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | UFV |
| Package / Case: | 6-SMD (5 Leads), Flat Lead |
