TPH5200FNH,L1Q

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 250V 26A 8SOP

Description
MOSFET (Metal Oxide) 250 V 26A (Tc) 10V 52mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 100 V - 78W (Tc) 150°C (TJ) Surface Mount 8-SOP Advance (5x5) 8-PowerVDFN

RoHS Compliant

TPH5200FNH,L1Q Datasheet

In Stock: 6,173

Can ship immediately

QTY UNIT PRICE
1:$2.78000
5000:$1.24602

Product Specifications

TypeDescription
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:52mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 100 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN

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