HUF75329D3

Rochester Electronics

MOSFET N-CH 55V 20A IPAK

Description
MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 26mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 20 V ±20V 1.06 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole I-PAK TO-251-3 Short Leads, IPak, TO-251AA

RoHS Compliant

HUF75329D3 Datasheet

In Stock: 1,907

Can ship immediately

QTY UNIT PRICE
1:$0.61000

Product Specifications

TypeDescription
Series:UltraFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.06 pF @ 25 V
FET Feature:-
Power Dissipation (Max):128W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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