IPP80N04S303AKSA1

Rochester Electronics

MOSFET N-CH 40V 80A TO220-3

Description
MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7.3 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole PG-TO220-3-1 TO-220-3

RoHS Compliant

IPP80N04S303AKSA1 Datasheet

In Stock: 696

Can ship immediately

QTY UNIT PRICE
1:$0.87000
500:$0.87000

Product Specifications

TypeDescription
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7.3 pF @ 25 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3

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