SQS966ENW-T1_GE3

Vishay / Siliconix

MOSFET N-CHAN 60V

Description
Standard 60V 6A (Tc) 36mOhm @ 1.25A, 10V 2.5V @ 250µA 8.8nC @ 10V 572pF @ 25V 27.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual PowerPAK® 1212-8W Dual

RoHS Compliant

SQS966ENW-T1_GE3 Datasheet

In Stock: 867

Can ship immediately

QTY UNIT PRICE
1:$0.97000
3000:$0.41529
6000:$0.38833

Product Specifications

TypeDescription
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Rds On (Max) @ Id, Vgs:36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:572pF @ 25V
Power - Max:27.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:PowerPAK® 1212-8W Dual
Supplier Device Package:PowerPAK® 1212-8W Dual

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