CSD86311W1723

Texas Instruments

MOSFET 2N-CH 25V 4.5A 12DSBGA

Description
Logic Level Gate 25V 4.5A 39mOhm @ 2A, 8V 1.4V @ 250µA 4nC @ 4.5V 585pF @ 12.5V 1.5W -55°C ~ 150°C (TJ) Surface Mount 12-UFBGA, DSBGA 12-DSBGA

RoHS Compliant

CSD86311W1723 Datasheet

In Stock: 2,691

Can ship immediately

QTY UNIT PRICE
1:$1.02000
3000:$0.45920

Product Specifications

TypeDescription
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:4.5A
Rds On (Max) @ Id, Vgs:39mOhm @ 2A, 8V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:585pF @ 12.5V
Power - Max:1.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:12-UFBGA, DSBGA
Supplier Device Package:12-DSBGA

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