BSL205NL6327

Rochester Electronics

SMALL SIGNAL N-CHANNEL MOSFET

Description
Logic Level Gate 20V 2.5A 50mOhm @ 2.5A, 4.5V 1.2V @ 11µA 3.2nC @ 4.5V 419pF @ 10V 500mW -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 PG-TSOP-6-6

RoHS Compliant

BSL205NL6327 Datasheet

In Stock: 3,100

Can ship immediately

QTY UNIT PRICE
1:$0.16000

Product Specifications

TypeDescription
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.5A
Rds On (Max) @ Id, Vgs:50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:419pF @ 10V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:PG-TSOP-6-6

You May Interested

FDG6335N
FDG6335N
MOSFET 2N-CH 20V 0.7A SOT-363
SIZ200DT-T1-GE3
SIZ200DT-T1-GE3
MOSFET N-CH DUAL 30V
LM5100CMY
LM5100CMY
HALF BRIDGE BASED MOSFET DRIVER,
FDS8858CZ
FDS8858CZ
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC
FDS9958
FDS9958
MOSFET 2P-CH 60V 2.9A 8-SO
MSCSM120HM16CT3AG
MSCSM120HM16CT3AG
PM-MOSFET-SIC-SBD~-SP3F
QH8K22TCR
QH8K22TCR
QH8K22 IS LOW ON - RESISTANCE MO
SQJ910AEP-T1_GE3
SQJ910AEP-T1_GE3
MOSFET 2 N-CH 30V POWERPAK SO8
FQPF13N50CTC003
FQPF13N50CTC003
MOSFET N-CHANNEL 500V, 13A
SPU03N60C3
SPU03N60C3
POWER FIELD-EFFECT TRANSISTOR, 3
SD5401CY SOIC 14L
SD5401CY SOIC 14L
QUAD HIGH SPEED N-CHANNEL LATERA
PMDT670UPE,115
PMDT670UPE,115
MOSFET 2P-CH 20V 0.55A SOT666
Top