MSCSM120HM16CT3AG

Roving Networks / Microchip Technology

PM-MOSFET-SIC-SBD~-SP3F

Description
Silicon Carbide (SiC) 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) Chassis Mount Module SP3F

RoHS Compliant

MSCSM120HM16CT3AG Datasheet

In Stock: 106

Can ship immediately

QTY UNIT PRICE
1:$481.34000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:4 N-Channel
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:173A (Tc)
Rds On (Max) @ Id, Vgs:16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id:2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:6040pF @ 1000V
Power - Max:745W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:SP3F

You May Interested

QH8K22TCR
QH8K22TCR
QH8K22 IS LOW ON - RESISTANCE MO
SQJ910AEP-T1_GE3
SQJ910AEP-T1_GE3
MOSFET 2 N-CH 30V POWERPAK SO8
FQPF13N50CTC003
FQPF13N50CTC003
MOSFET N-CHANNEL 500V, 13A
SPU03N60C3
SPU03N60C3
POWER FIELD-EFFECT TRANSISTOR, 3
SD5401CY SOIC 14L
SD5401CY SOIC 14L
QUAD HIGH SPEED N-CHANNEL LATERA
PMDT670UPE,115
PMDT670UPE,115
MOSFET 2P-CH 20V 0.55A SOT666
SP8J5FRATB
SP8J5FRATB
4V DRIVE PCH+PCH MOSFET (CORRESP
SI5935CDC-T1-E3
SI5935CDC-T1-E3
MOSFET 2P-CH 20V 4A 1206-8
FW907-TL-E
FW907-TL-E
TRANSISTOR
SI7923DN-T1-GE3
SI7923DN-T1-GE3
MOSFET 2P-CH 30V 4.3A 1212-8
ZXMC3A16DN8TA
ZXMC3A16DN8TA
MOSFET N/P-CH 30V 8SOIC
DF11MR12W1M1PB11BPSA1
DF11MR12W1M1PB11BPSA1
MOSFET MODULE 1200V
Top