US1J-E3/61T

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 1A DO214AC

Description
600 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V 10pF @ 4V, 1MHz Surface Mount DO-214AC, SMA DO-214AC (SMA) -55°C ~ 150°C

RoHS Compliant

US1J-E3/61T Datasheet

In Stock: 3,234

Can ship immediately

QTY UNIT PRICE
1:$0.49000
1800:$0.12717
3600:$0.11577

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:DO-214AC (SMA)
Operating Temperature - Junction:-55°C ~ 150°C

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