WNSC021200Q

WeEn Semiconductors Co., Ltd

SILICON CARBIDE POWER DIODE

Description
1200 V 2A 1.6 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 109pF @ 1V, 1MHz Through Hole TO-220-2 TO-220AC 175°C (Max)

RoHS Compliant

WNSC021200Q Datasheet

In Stock: 3,130

Can ship immediately

QTY UNIT PRICE
1:$2.98000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 2 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:20 µA @ 1200 V
Capacitance @ Vr, F:109pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)

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