AUIRL3705N

Rochester Electronics

AUTOMOTIVE HEXFET N-CHANNEL

Description
MOSFET (Metal Oxide) 55 V 89A (Tc) - 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V - 3600 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole TO-220AB TO-220-3

RoHS Compliant

AUIRL3705N Datasheet

In Stock: 22,138

Can ship immediately

QTY UNIT PRICE
1:$1.39000

Product Specifications

TypeDescription
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 5 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 25 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3

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