SIA462DJ-T1-GE3

Vishay / Siliconix

MOSFET N-CH 30V 12A PPAK SC70-6

Description
MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 18mOhm @ 9A, 10V 2.4V @ 250µA 17 nC @ 10 V ±20V 570 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 Single PowerPAK® SC-70-6

RoHS Compliant

SIA462DJ-T1-GE3 Datasheet

In Stock: 297

Can ship immediately

QTY UNIT PRICE
1:$0.43000
3000:$0.16632
6000:$0.15618

Product Specifications

TypeDescription
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6

You May Interested

2SJ216-E
2SJ216-E
P-CHANNEL SMALL SIGNAL MOSFET
BTS282ZE3180AATMA1
BTS282ZE3180AATMA1
N-CHANNEL POWER MOSFET
HUF76009P3
HUF76009P3
N-CHANNEL POWER MOSFET
STB12NM50N
STB12NM50N
MOSFET N-CH 500V 11A D2PAK
IXTA44P15T
IXTA44P15T
MOSFET P-CH 150V 44A TO263
IXFT52N50P2
IXFT52N50P2
MOSFET N-CH 500V 52A TO268
BUK9606-55B,118
BUK9606-55B,118
MOSFET N-CH 55V 75A D2PAK
IRFBC20PBF-BE3
IRFBC20PBF-BE3
MOSFET N-CH 600V 2.2A TO220AB
G2R1000MT33J
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
IPS50R520CP
IPS50R520CP
MOSFET N-CH 550V 7.1A TO251-3
HUF76429D3ST
HUF76429D3ST
MOSFET N-CH 60V 20A TO252AA
PMV65UN,215
PMV65UN,215
MOSFET N-CH 20V 2.2A TO236AB
Top