TPN1R603PL,L1Q

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 30V 80A 8TSON

Description
MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 1.6mOhm @ 40A, 10V 2.1V @ 300µA 41 nC @ 10 V ±20V 3900 pF @ 15 V - 104W (Tc) 175°C Surface Mount 8-TSON Advance (3.3x3.3) 8-PowerVDFN

RoHS Compliant

TPN1R603PL,L1Q Datasheet

In Stock: 15,948

Can ship immediately

QTY UNIT PRICE
1:$0.96000
5000:$0.54338

Product Specifications

TypeDescription
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 15 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN

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