MOSFET N-CH 650V 4.2A THIN-PAK
RoHS Compliant
Can ship immediately
QTY | UNIT PRICE |
1: | $0.49000 |
5000: | $0.49000 |
Type | Description |
---|---|
Series: | CoolMOS™ C6 |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 328 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 34.7W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Thin-PAK (5x6) |
Package / Case: | 8-PowerTDFN |