IPL65R1K0C6SATMA1

Rochester Electronics

MOSFET N-CH 650V 4.2A THIN-PAK

Description
MOSFET (Metal Oxide) 650 V 4.2A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 150µA 15 nC @ 10 V ±20V 328 pF @ 100 V - 34.7W (Tc) -40°C ~ 150°C (TJ) Surface Mount Thin-PAK (5x6) 8-PowerTDFN

RoHS Compliant

IPL65R1K0C6SATMA1 Datasheet

In Stock: 4,426

Can ship immediately

QTY UNIT PRICE
1:$0.49000
5000:$0.49000

Product Specifications

TypeDescription
Series:CoolMOS™ C6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
FET Feature:-
Power Dissipation (Max):34.7W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Thin-PAK (5x6)
Package / Case:8-PowerTDFN

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