EPC2030

EPC

GANFET NCH 40V 31A DIE

Description
GaNFET (Gallium Nitride) 40 V 31A (Ta) - 2.4mOhm @ 30A, 5V 2.5V @ 16mA 18 nC @ 5 V - 1900 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount Die Die

RoHS Compliant

EPC2030 Datasheet

In Stock: 3,181

Can ship immediately

QTY UNIT PRICE
1:$7.20000
500:$4.25381
1000:$3.58755

Product Specifications

TypeDescription
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id:2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 5 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 20 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die

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