NTLJS4114NTAG

Rochester Electronics

MOSFET N-CH 30V 3.6A 6WDFN

Description
MOSFET (Metal Oxide) 30 V 3.6A (Ta) 1.8V, 4.5V 35mOhm @ 2A, 4.5V 1V @ 250µA 13 nC @ 4.5 V ±12V 650 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN (2x2) 6-WDFN Exposed Pad

RoHS Compliant

NTLJS4114NTAG Datasheet

In Stock: 87,108

Can ship immediately

QTY UNIT PRICE
1:$0.21000
3000:$0.21000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:35mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 15 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad

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