IMW65R107M1HXKSA1

IR (Infineon Technologies)

MOSFET 650V NCH SIC TRENCH

Description
- - 20A (Tc) - - - - - - - - - - - -

RoHS Compliant

IMW65R107M1HXKSA1 Datasheet

In Stock: 556

Can ship immediately

QTY UNIT PRICE
1:$6.80000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-

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