POWER FIELD-EFFECT TRANSISTOR, 2
RoHS Compliant
Can ship immediately
| QTY | UNIT PRICE |
| 1: | $0.42000 |
| 1000: | $0.19800 |
| 2000: | $0.18480 |
| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 59 V |
| Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 3.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 110mOhm @ 2.6A, 10V |
| Vgs(th) (Max) @ Id: | 1.9V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.5 nC @ 4.5 V |
| Vgs (Max): | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 155 pF @ 35 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.69W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-223 |
| Package / Case: | TO-261-4, TO-261AA |
