FDS3612

Rochester Electronics

MOSFET N-CH 100V 3.4A 8SOIC

Description
MOSFET (Metal Oxide) 100 V 3.4A (Ta) 6V, 10V 120mOhm @ 3.4A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 632 pF @ 50 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)

RoHS Compliant

FDS3612 Datasheet

In Stock: 4,920

Can ship immediately

QTY UNIT PRICE
1:$0.61000

Product Specifications

TypeDescription
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:120mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:632 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)

You May Interested

IPI90R340C3XKSA1
IPI90R340C3XKSA1
MOSFET N-CH 900V 15A TO262-3
UPA2734GR-E1-AT
UPA2734GR-E1-AT
P-CHANNEL POWER MOSFET
XPH2R106NC,L1XHQ
XPH2R106NC,L1XHQ
MOSFET N-CH 60V 110A 8SOP
AUIRFB8405
AUIRFB8405
MOSFET N-CH 40V 120A TO220AB
FDU6676AS
FDU6676AS
MOSFET N-CH 30V 90A IPAK
APT34F60B
APT34F60B
MOSFET N-CH 600V 36A TO247
BUK9M9R5-40HX
BUK9M9R5-40HX
MOSFET N-CH 40V 40A LFPAK33
SIA441DJ-T1-GE3
SIA441DJ-T1-GE3
MOSFET P-CH 40V 12A PPAK SC70-6
APT21M100J
APT21M100J
MOSFET N-CH 1000V 21A ISOTOP
BUK9M17-30EX
BUK9M17-30EX
MOSFET N-CH 30V 37A LFPAK33
IRFB3307ZPBF
IRFB3307ZPBF
MOSFET N-CH 75V 120A TO220AB
NX2020P1115
NX2020P1115
POWER FIELD-EFFECT TRANSISTOR
Top