XPH2R106NC,L1XHQ

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 60V 110A 8SOP

Description
MOSFET (Metal Oxide) 60 V 110A (Ta) - 2.1mOhm @ 55A, 10V 2.5V @ 1mA 104 nC @ 10 V ±20V 6900 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount 8-SOP Advance (5x5) 8-PowerVDFN

RoHS Compliant

XPH2R106NC,L1XHQ Datasheet

In Stock: 9,983

Can ship immediately

QTY UNIT PRICE
1:$2.27000

Product Specifications

TypeDescription
Series:Automotive, AEC-Q101, U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:110A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:2.1mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 10 V
FET Feature:-
Power Dissipation (Max):960mW (Ta), 170W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN

You May Interested

AUIRFB8405
AUIRFB8405
MOSFET N-CH 40V 120A TO220AB
FDU6676AS
FDU6676AS
MOSFET N-CH 30V 90A IPAK
APT34F60B
APT34F60B
MOSFET N-CH 600V 36A TO247
BUK9M9R5-40HX
BUK9M9R5-40HX
MOSFET N-CH 40V 40A LFPAK33
SIA441DJ-T1-GE3
SIA441DJ-T1-GE3
MOSFET P-CH 40V 12A PPAK SC70-6
APT21M100J
APT21M100J
MOSFET N-CH 1000V 21A ISOTOP
BUK9M17-30EX
BUK9M17-30EX
MOSFET N-CH 30V 37A LFPAK33
IRFB3307ZPBF
IRFB3307ZPBF
MOSFET N-CH 75V 120A TO220AB
NX2020P1115
NX2020P1115
POWER FIELD-EFFECT TRANSISTOR
FDPF12N50UT
FDPF12N50UT
MOSFET N-CH 500V 10A TO220F
IRL530NSPBF
IRL530NSPBF
HEXFET POWER MOSFET
TPN7R504PL,LQ
TPN7R504PL,LQ
MOSFET N-CH 40V 38A 8TSON
Top