FDD6632

Rochester Electronics

MOSFET N-CH 30V 9A DPAK

Description
MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 70mOhm @ 9A, 10V 3V @ 250µA 4 nC @ 5 V ±20V 255 pF @ 15 V - 15W (Tc) -55°C ~ 175°C (TJ) Surface Mount D-PAK (TO-252) TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Compliant

FDD6632 Datasheet

In Stock: 17,280

Can ship immediately

QTY UNIT PRICE
1:$0.14000

Product Specifications

TypeDescription
Series:UltraFET™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:70mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:255 pF @ 15 V
FET Feature:-
Power Dissipation (Max):15W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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