FDB0260N1007L

Rochester Electronics

MOSFET N-CH 100V 200A TO263-7

Description
MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 2.6mOhm @ 27A, 10V 4V @ 250µA 118 nC @ 10 V ±20V 8.545 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount TO-263-7 TO-263-7, D²Pak (6 Leads + Tab)

RoHS Compliant

FDB0260N1007L Datasheet

In Stock: 1,401

Can ship immediately

QTY UNIT PRICE
1:$3.66000
800:$3.66000

Product Specifications

TypeDescription
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:118 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8.545 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)

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