PMGD8000LN,115

NXP Semiconductors

MOSFET 2N-CH 30V 0.125A 6TSSOP

Description
Logic Level Gate 30V 125mA 8Ohm @ 10mA, 4V 1.5V @ 100µA 0.35nC @ 4.5V 18.5pF @ 5V 200mW -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 6-TSSOP

RoHS Compliant

PMGD8000LN,115 Datasheet

In Stock: 136

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Product Specifications

TypeDescription
Series:TrenchMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:125mA
Rds On (Max) @ Id, Vgs:8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:18.5pF @ 5V
Power - Max:200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP

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