APTM100A23SCTG

Microsemi

MOSFET 2N-CH 1000V 36A SP4

Description
Silicon Carbide (SiC) 1000V (1kV) 36A 270mOhm @ 18A, 10V 5V @ 5mA 308nC @ 10V 8700pF @ 25V 694W -40°C ~ 150°C (TJ) Chassis Mount SP4 SP4

RoHS Compliant

APTM100A23SCTG Datasheet

In Stock: 171

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Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:36A
Rds On (Max) @ Id, Vgs:270mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:308nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:8700pF @ 25V
Power - Max:694W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP4
Supplier Device Package:SP4

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