QJD1210011

Powerex, Inc.

MOSFET 2N-CH 1200V 100A SIC

Description
Silicon Carbide (SiC) 1200V (1.2kV) 100A (Tc) 25mOhm @ 100A, 20V 5V @ 10mA 500nC @ 20V 10200pF @ 800V 900W -40°C ~ 175°C (TJ) Chassis Mount Module Module

RoHS Compliant

QJD1210011 Datasheet

In Stock: 124

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Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Rds On (Max) @ Id, Vgs:25mOhm @ 100A, 20V
Vgs(th) (Max) @ Id:5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:10200pF @ 800V
Power - Max:900W
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module

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