BSP170PE6327

IR (Infineon Technologies)

MOSFET P-CH 60V 1.9A SOT223-4

Description
MOSFET (Metal Oxide) 60 V 1.9A (Ta) 10V 300mOhm @ 1.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 410 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount PG-SOT223-4 TO-261-4, TO-261AA

RoHS Compliant

BSP170PE6327 Datasheet

In Stock: 153

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Product Specifications

TypeDescription
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA

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