SI4493DY-T1-GE3

Vishay / Siliconix

MOSFET P-CH 20V 10A 8SO

Description
MOSFET (Metal Oxide) 20 V 10A (Ta) 2.5V, 4.5V 7.75mOhm @ 14A, 4.5V 1.4V @ 250µA 110 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SO 8-SOIC (0.154", 3.90mm Width)

RoHS Compliant

SI4493DY-T1-GE3 Datasheet

In Stock: 144

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Product Specifications

TypeDescription
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:7.75mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)

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