Vishay General Semiconductor – Diodes Division
MOSFET N-CH 100V 180A SOT-227
RoHS Compliant
Can ship immediately
Call for price or sumbit a RFQ
| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 6.5mOhm @ 108A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 380 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 10700 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 480W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Supplier Device Package: | SOT-227 |
| Package / Case: | SOT-227-4, miniBLOC |
