APT5012JN

Microsemi

MOSFET N-CH 500V 43A ISOTOP

Description
MOSFET (Metal Oxide) 500 V 43A (Tc) 10V 120mOhm @ 21.5A, 10V 4V @ 2.5mA 370 nC @ 10 V ±30V 6500 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount ISOTOP® SOT-227-4, miniBLOC

RoHS Compliant

APT5012JN Datasheet

In Stock: 178

Can ship immediately

Call for price or sumbit a RFQ

Product Specifications

TypeDescription
Series:POWER MOS IV®
Package:Tray
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:120mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id:4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:370 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:ISOTOP®
Package / Case:SOT-227-4, miniBLOC

You May Interested

IRFU18N15D
IRFU18N15D
MOSFET N-CH 150V 18A IPAK
IRF1104STRL
IRF1104STRL
MOSFET N-CH 40V 100A D2PAK
IXFK26N60Q
IXFK26N60Q
MOSFET N-CH 600V 26A TO264AA
MCH6342-TL-H
MCH6342-TL-H
MOSFET P-CH 30V 4.5A 6MCPH
IPI06CN10N G
IPI06CN10N G
MOSFET N-CH 100V 100A TO262-3
SIA439EDJ-T1-GE3
SIA439EDJ-T1-GE3
MOSFET P-CH 20V 28A PPAK SC70-6
AON7448L
AON7448L
MOSFET N-CH 80V 8DFN
NTGS3443T1
NTGS3443T1
MOSFET P-CH 20V 2.2A 6TSOP
NP35N04YUG-E1-AY
NP35N04YUG-E1-AY
MOSFET N-CH 40V 35A 8HSON
AON6756_101
AON6756_101
MOSFET N-CH 30V 36A 8DFN
Top