SSM6L35FU(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

MOSFET N/P-CH 20V 0.18A/0.1A US6

Description
Logic Level Gate, 1.2V Drive 20V 180mA, 100mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 200mW -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 US6

RoHS Compliant

SSM6L35FU(TE85L,F) Datasheet

In Stock: 154

Can ship immediately

QTY UNIT PRICE
1:$0.09306
3000:$0.09153

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:180mA, 100mA
Rds On (Max) @ Id, Vgs:3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:9.5pF @ 3V
Power - Max:200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

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