JANTX1N6629US

Microsemi

DIODE GEN PURP 880V 1.4A D5B

Description
880 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 880 V 40pF @ 10V, 1MHz Surface Mount SQ-MELF, E D-5B -65°C ~ 150°C

RoHS Compliant

JANTX1N6629US Datasheet

In Stock: 197

Can ship immediately

QTY UNIT PRICE
1:$21.75000
100:$21.75000

Product Specifications

TypeDescription
Series:Military, MIL-PRF-19500/590
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 880 V
Capacitance @ Vr, F:40pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, E
Supplier Device Package:D-5B
Operating Temperature - Junction:-65°C ~ 150°C

You May Interested

VS-150KSR30
VS-150KSR30
DIODE GEN PURP 300V 150A B42
VS-82PFR120
VS-82PFR120
DIODE GEN PURP 1.2KV 80A DO203AB
GP15K-E3/73
GP15K-E3/73
DIODE GEN PURP 800V 1.5A DO204AC
V3PL45-M3/I
V3PL45-M3/I
SCHOTTKY RECTIFIER 3A 45V SMP
1N4448X-TP
1N4448X-TP
DIODE GEN PURP 75V 250MA SOD523
SE10FJ-M3/H
SE10FJ-M3/H
DIODE GEN PURP 600V 1A DO219AB
VF20100S-M3/4W
VF20100S-M3/4W
DIODE SCHOTTKY 20A 100V ITO220AB
1N1189R
1N1189R
DIODE GEN PURP REV 600V 35A DO5
JAN1N6623US
JAN1N6623US
DIODE GEN PURP 880V 1A D5A
HER303G-D1-3000
HER303G-D1-3000
DIODE GEN PURP 200V 3A DO201AD
ES1LG R3G
ES1LG R3G
DIODE GEN PURP 400V 1A DO214AC
VS-15TQ060STRLHM3
VS-15TQ060STRLHM3
SCHOTTKY - D2PAK
Top