JAN1N6629

Microsemi

DIODE GEN PURP 880V 1.4A AXIAL

Description
880 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 800 V - Through Hole E, Axial - -65°C ~ 175°C

RoHS Compliant

JAN1N6629 Datasheet

In Stock: 163

Can ship immediately

QTY UNIT PRICE
1:$13.60000

Product Specifications

TypeDescription
Series:Military, MIL-PRF-19500/590
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 800 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:E, Axial
Supplier Device Package:-
Operating Temperature - Junction:-65°C ~ 175°C

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