JANTXV1N6629US

Microsemi

DIODE GEN PURP 800V 1.4A D5B

Description
800 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 800 V 40pF @ 10V, 1MHz Surface Mount SQ-MELF, E D-5B -65°C ~ 150°C

RoHS Compliant

JANTXV1N6629US Datasheet

In Stock: 170

Can ship immediately

QTY UNIT PRICE
1:$25.35000
100:$25.35000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:2 µA @ 800 V
Capacitance @ Vr, F:40pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, E
Supplier Device Package:D-5B
Operating Temperature - Junction:-65°C ~ 150°C

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