Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 12A TO220SIS
RoHS Compliant
Can ship immediately
| QTY | UNIT PRICE |
| 1: | $1.46400 |
| 2500: | $1.46400 |
| Type | Description |
|---|---|
| Series: | π-MOSVII |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 550mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1800 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 45W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220SIS |
| Package / Case: | TO-220-3 Full Pack |
