HTNFET-DC

Honeywell Aerospace

MOSFET N-CH 55V 8-DIP

Description
MOSFET (Metal Oxide) 55 V - 5V 400mOhm @ 100mA, 5V 2.4V @ 100µA 4.3 nC @ 5 V 10V 290 pF @ 28 V - 50W (Tj) - Through Hole - 8-CDIP Exposed Pad

RoHS Compliant

HTNFET-DC Datasheet

In Stock: 135

Can ship immediately

QTY UNIT PRICE
1:$424.27000

Product Specifications

TypeDescription
Series:HTMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id:2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 5 V
Vgs (Max):10V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 28 V
FET Feature:-
Power Dissipation (Max):50W (Tj)
Operating Temperature:-
Mounting Type:Through Hole
Supplier Device Package:-
Package / Case:8-CDIP Exposed Pad

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