NP100P06PDG-E1-AY

Renesas Electronics America

MOSFET P-CH 60V 100A TO263

Description
MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 2.5V @ 1mA 300 nC @ 10 V ±20V 15000 pF @ 10 V - 1.8W (Ta), 200W (Tc) 175°C (TJ) Surface Mount TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RoHS Compliant

NP100P06PDG-E1-AY Datasheet

In Stock: 118

Can ship immediately

QTY UNIT PRICE
1:$2.94534

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 200W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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