CY7S1041G30-10VXI

Rochester Electronics

STANDARD SRAM, 256KX16, 10NS PDS

Description
SRAM SRAM - Asynchronous 4Mb (256K x 16) Parallel - 10ns 10 ns 2.2V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount 44-BSOJ (0.400", 10.16mm Width) 44-SOJ

RoHS Compliant

CY7S1041G30-10VXI Datasheet

In Stock: 177

Can ship immediately

QTY UNIT PRICE
1:$7.66000
10:$7.15740
25:$7.01560

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
Memory Type:Volatile
Memory Format:SRAM
Technology:SRAM - Asynchronous
Memory Size:4Mb (256K x 16)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:10ns
Access Time:10 ns
Voltage - Supply:2.2V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package:44-SOJ

You May Interested

CY7C1518KV18-250BZXC
CY7C1518KV18-250BZXC
DDR SRAM, 4MX18, 0.45NS PBGA165
CY7C1020B-15VCT
CY7C1020B-15VCT
STANDARD SRAM, 32KX16, 15NS
AT28C256-15JU
AT28C256-15JU
IC EEPROM 256KBIT PAR 32PLCC
DS1270W-150
DS1270W-150
IC NVSRAM 16MBIT PARALLEL 36EDIP
CY62128BNLL-70ZXA
CY62128BNLL-70ZXA
IC SRAM 1MBIT PARALLEL 32TSOP I
CY7C1372KV33-200AXC
CY7C1372KV33-200AXC
IC SRAM 18MBIT PARALLEL 100TQFP
CY27C512-90JI
CY27C512-90JI
OTP ROM, 64KX8, 90NS PQCC32
IS25LQ512B-JNLE
IS25LQ512B-JNLE
IC FLASH 512KBIT SPI/QUAD 8SOIC
R1LV0108ESA-5SI#BX
R1LV0108ESA-5SI#BX
STANDARD SRAM, 128KX8, 55NS
BU9882F-WE2
BU9882F-WE2
IC EEPROM 2K I2C 400KHZ 14SOP
MT58V1MV18DT-7.5
MT58V1MV18DT-7.5
IC SRAM 18MBIT PARALLEL 100TQFP
CAT25512VE-GT3
CAT25512VE-GT3
EEPROM, 64KX8, SERIAL, CMOS, PDS
Top