BS2101F-E2

ROHM Semiconductor

IC GATE DRV HI-SIDE/LO-SIDE 8SOP

Description
Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 18V 1V, 2.6V 60mA, 130mA Non-Inverting 600 V 60ns, 20ns -40°C ~ 125°C (TA) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP

RoHS Compliant

BS2101F-E2 Datasheet

In Stock: 2,440

Can ship immediately

QTY UNIT PRICE
1:$1.49000
2500:$0.33060
5000:$0.31920

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Driven Configuration:High-Side or Low-Side
Channel Type:Synchronous
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 18V
Logic Voltage - VIL, VIH:1V, 2.6V
Current - Peak Output (Source, Sink):60mA, 130mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):60ns, 20ns
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:8-SOP

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