EPC2107

EPC

GANFET 3 N-CH 100V 9BGA

Description
GaNFET (Gallium Nitride) 100V 1.7A, 500mA 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V 2.5V @ 100µA, 2.5V @ 20µA 0.16nC @ 5V, 0.044nC @ 5V 16pF @ 50V, 7pF @ 50V - -40°C ~ 150°C (TJ) Surface Mount 9-VFBGA 9-BGA (1.35x1.35)

RoHS Compliant

EPC2107 Datasheet

In Stock: 1,510

Can ship immediately

QTY UNIT PRICE
1:$2.01000
2500:$0.89932

Product Specifications

TypeDescription
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:1.7A, 500mA
Rds On (Max) @ Id, Vgs:320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Vgs(th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:16pF @ 50V, 7pF @ 50V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:9-VFBGA
Supplier Device Package:9-BGA (1.35x1.35)

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